Title
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A microstructural study of the thermal stability of atomic layer deposited thin films
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Author
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Abstract
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The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. |
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Language
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English
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Source (journal)
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Institute of physics conference series. - Bristol, 1985, currens
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Source (book)
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Microscopy of semiconducting materials
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Publication
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Cambridge
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IOP
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2003
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ISBN
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0-7503-0979-2
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Volume/pages
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(2003)
, p. 397-400
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ISI
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000222976100091
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