Publication
Title
A microstructural study of the thermal stability of atomic layer deposited thin films
Author
Abstract
The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range.
Language
English
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Source (book)
Microscopy of semiconducting materials
Publication
Cambridge : IOP, 2003
ISBN
0-7503-0979-2
Volume/pages
(2003), p. 397-400
ISI
000222976100091
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 08.10.2008
Last edited 05.05.2017
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