| Title |
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A microstructural study of the thermal stability of atomic layer deposited thin films
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| Author |
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| Abstract |
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| The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. | | |
| Language |
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English
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| Source (journal) |
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CONFERENCE SERIES- INSTITUTE OF PHYSICS | |
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Microscopy of semiconducting materials | |
| Publication |
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Cambridge : IOP, 2003
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| ISBN |
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0-7503-0979-2
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| Volume/pages |
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(2003), p. 397-400
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| ISI |
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000222976100091
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