Title
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
conferenceObject
Publication
Wuhan ,
Source (journal)
Materials Research Society symposium proceedings. - Wuhan
Volume/pages
798(2004) , p. Y10.22,1-6
ISSN
0272-9172
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Handle