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Title
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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers
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Author
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Language
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English
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Source (journal)
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Materials Research Society symposium proceedings. - Wuhan
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Publication
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Wuhan
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2004
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ISSN
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0272-9172
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Volume/pages
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798
(2004)
, p. Y10.22,1-6
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