Publication
Title
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers
Author
Language
English
Source (journal)
Materials Research Society symposium proceedings. - Wuhan
Publication
Wuhan : 2004
ISSN
0272-9172
Volume/pages
798(2004), p. Y10.22,1-6
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Record
Identification
Creation 08.10.2008
Last edited 23.12.2015
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