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Title
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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers
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Author
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Language
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English
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Source (journal)
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Journal of electronic materials. - Boston, Mass.
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Publication
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Boston, Mass.
:
2006
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ISSN
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0361-5235
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DOI
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10.1007/S11664-006-0105-1
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Volume/pages
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35
:4
(2006)
, p. 592-598
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ISI
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000237101800016
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Full text (Publisher's DOI)
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