|
Title
|
|
|
|
Stabilization of the cubic phase of by Y addition in films grown by metal organic chemical vapor deposition
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| Addition of yttrium in HfO(2) thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO(2) is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH(3). (c) 2006 American Institute of Physics. |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
| |
|
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2006
| |
|
ISSN
|
|
|
|
0003-6951
[print]
1077-3118
[online]
| |
|
DOI
|
|
|
|
10.1063/1.2216102
| |
|
Volume/pages
|
|
|
|
89
:1
(2006)
, p. 012902,1-012902,3
| |
|
Article Reference
|
|
|
|
012902
| |
|
ISI
|
|
|
|
000238849200046
| |
|
Medium
|
|
|
|
E-only publicatie
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|