Publication
Title
Electron microscopy and mass-spectrometry study of $In_{0.72}Ga_{0.28}As_{0.62}P_{0.38}$ lasers grown by liquid phase epitaxy
Author
Abstract
 Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.
Language
English
Source (journal)
Physica status solidi: A: applied research. - Berlin
Publication
Berlin : 1993
ISSN
0031-8965
Volume/pages
140:2(1993), p. 453-462
ISI
A1993MP79700015
Full text (Publishers DOI)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address