Title
|
|
|
|
Mechanism for Ohmic contact formation on passivated AlGaN/GaN high-electron-mobility transistors
|
|
Author
|
|
|
|
|
|
Language
|
|
|
|
English
|
|
Source (journal)
|
|
|
|
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
|
|
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2006
|
|
ISSN
|
|
|
|
0003-6951
[print]
1077-3118
[online]
|
|
DOI
|
|
|
|
10.1063/1.2388889
|
|
Volume/pages
|
|
|
|
89
:20
(2006)
, p. ARTN 201908
|
|
ISI
|
|
|
|
000242100200030
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|