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Title
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Mechanism for Ohmic contact formation on passivated AlGaN/GaN high-electron-mobility transistors
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Author
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
:
American Institute of Physics
,
2006
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.2388889
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Volume/pages
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89
:20
(2006)
, p. ARTN 201908
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ISI
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000242100200030
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Full text (Publisher's DOI)
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