Title
Mechanism for Ohmic contact formation on <tex>$Si_{3}N_{4}$</tex> passivated AlGaN/GaN high-electron-mobility transistors Mechanism for Ohmic contact formation on <tex>$Si_{3}N_{4}$</tex> passivated AlGaN/GaN high-electron-mobility transistors
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Volume/pages
89(2006) :20 , p. ARTN 201908-
ISSN
0003-6951
1077-3118
ISI
000242100200030
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
E-info
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