Publication
Title
Mechanism for Ohmic contact formation on passivated AlGaN/GaN high-electron-mobility transistors
Author
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics , 2006
ISSN
0003-6951 [print]
1077-3118 [online]
DOI
10.1063/1.2388889
Volume/pages
89 :20 (2006) , p. ARTN 201908
ISI
000242100200030
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 08.10.2008
Last edited 30.12.2024
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