| Title |
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Mechanism for Ohmic contact formation on passivated AlGaN/GaN high-electron-mobility transistors
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| Author |
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| Language |
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English
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| Source (journal) |
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens |
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| Publication |
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New York, N.Y. : American Institute of Physics, 2006
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| ISSN |
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0003-6951 [print]
1077-3118 [online]
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| Volume/pages |
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89:20(2006), p. ARTN 201908
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| ISI |
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000242100200030
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| Full text (Publisher's DOI) |
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