Publication
Title
Properties of B and P doped Ge nanowires
Author
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2007
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
90(2007), p. 263103,1-3
ISI
000247625500068
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 08.10.2008
Last edited 17.08.2017
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