Publication
Title
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics
Author
Language
English
Source (journal)
Solid state communications. - New York, N.Y.
Publication
New York, N.Y. : 2008
ISSN
0038-1098
Volume/pages
147:1/2(2008), p. 31-35
ISI
000257220400009
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 08.10.2008
Last edited 11.06.2017
To cite this reference