Title
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristicsQuantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics
Author
Faculty/Department
Faculty of Sciences. Physics
Research group
Theory of quantum systems and complex systems
Condensed Matter Theory
Department of Physics
Electron microscopy for materials research (EMAT)
Publication type
article
Publication
New York, N.Y.,
Source (journal)
Solid state communications. - New York, N.Y.
Volume/pages
147(2008):1/2, p. 31-35
ISSN
0038-1098
ISI
000257220400009
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
E-info
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