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Title
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Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics
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Author
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Language
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English
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Source (journal)
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Solid state communications. - New York, N.Y.
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Publication
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New York, N.Y.
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2008
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ISSN
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0038-1098
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DOI
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10.1016/J.SSC.2008.04.025
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Volume/pages
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147
:1/2
(2008)
, p. 31-35
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ISI
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000257220400009
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Full text (Publisher's DOI)
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