Title
Irradiation defects in superhard cubic boron nitride single crystals Irradiation defects in superhard cubic boron nitride single crystals
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Source (journal)
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Volume/pages
266(2008) :12/13 , p. 2784-2787
ISSN
0168-583X
ISI
000257721300028
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Single crystallites of superhard, semiconducting, n-type, amber colored and p-type, blue colored, Be-doped cubic boron nitride have been irradiated either with UV (350 nm) light or with an intense beam of accelerated (1 MeV) electrons. The examination of the irradiated samples at low temperatures by high frequency W (95 GHz)-band electron spin resonance reveals several new, radiation-induced, isotropic paramagnetic centers. The UV irradiation of both types of crystals yields centers involving very likely protons. In the amber c-BN crystals the irradiation with 1 MeV electrons results in the formation of vacancy associated paramagnetic defects and quasi-free electrons in colloidal particles.
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