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Title
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Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure
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Author
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Abstract
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| We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given. |
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Language
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English
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Source (journal)
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Acta crystallographica: section A: foundations of crystallography. - Copenhagen
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Publication
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Copenhagen
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2009
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ISSN
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0108-7673
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DOI
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10.1107/S0108767309004966
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Volume/pages
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65
(2009)
, p. 227-231
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ISI
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000264927100006
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Full text (Publisher's DOI)
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