Publication
Title
Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure
Author
Abstract
We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.
Language
English
Source (journal)
Acta crystallographica: section A: foundations of crystallography. - Copenhagen
Publication
Copenhagen : 2009
ISSN
0108-7673
Volume/pages
65(2009), p. 227-231
ISI
000264927100006
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 06.04.2009
Last edited 04.08.2017
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