Publication
Title
Relaxation phenomena at the metal-to-insulator transition in single crystals
Author
Abstract
The time dependence of the resistance RAC of a La0.8Sr0.2MnO3 single crystal has been investigated in the vicinity of the metal-to-insulator transition temperature. We used local probe microscopy to show the existence, at room temperature, of coexisting clusters of micrometer size. Our analysis shows that relaxation effects can be described with a simple exponential contribution using a random resistor-network, based on phase separation between insulating and metallic domains. Our results clearly prove the existence of a percolation threshold over which no percolation path exists. Moreover, these results highlight the significant role of the remanent magnetization.
Language
English
Source (journal)
Solid state communications. - New York, N.Y.
Publication
New York, N.Y. : 2008
ISSN
0038-1098
Volume/pages
148:7/8(2008), p. 340-344
ISI
000260907800020
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 28.04.2009
Last edited 18.06.2017
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