Publication
Title
Microstructure and high temperature transport properties of high quality epitaxial films
Author
Abstract
We report the high temperature electronic transport properties of SrFeO3 − ä epitaxial thin films obtained by pulsed laser deposition on NdGaO3(110) substrates. The films show total conductivity higher than the bulk material and apparent activation energy of about 0.12 eV in O2, lower than reported values for SrFeO3 − ä films. The conductivity dependence with oxygen partial pressure shows a power dependence with an exponent close to + 1/4, in agreement with expected point defect equilibrium. For a given oxygen partial pressure, the temperature coefficient of resistance (TCR) shows a low positive value of about 1.52.5 10− 3 K− 1, which is still suitable for resistive oxygen sensing applications. The transport properties of the films are discussed in view of their particular microstructure.
Language
English
Source (journal)
Solid state ionics. - Amsterdam
Publication
Amsterdam : 2008
ISSN
0167-2738
DOI
10.1016/J.SSI.2008.06.004
Volume/pages
179 :35/36 (2008) , p. 1996-1999
ISI
000261904800007
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 05.05.2009
Last edited 04.03.2024
To cite this reference