|
Title
|
|
|
|
Enhancing total conductivity of epitaxial thin films by reducing thickness
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| High quality epitaxial c axis oriented La2NiO4+ä thin films have been prepared by the pulsed injection metal organic chemical vapor deposition technique on different substrates. High-resolution electron microscopy/transmission electron microscopy has been used to confirm the high crystalline quality of the deposited films. The c-parameter evolution has been studied by XRD as a function of time and gas atmosphere. The high temperature transport properties along the basal a−b plane of epitaxial La2NiO4+ä films have been measured, and the total conductivity of the layers has been found to increase as the thickness is reduced. Layers of 50 nm and thinner have shown a maximum conductivity larger than that measured for single-crystals, in particular, the 33 nm thick films with a conductivity of 475 S/cm in oxygen correspond to the highest value measured to date for this material. |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
The journal of physical chemistry: C : nanomaterials and interfaces. - Washington, D.C., 2007, currens
| |
|
Publication
|
|
|
|
Washington, D.C.
:
2008
| |
|
ISSN
|
|
|
|
1932-7447
[print]
1932-7455
[online]
| |
|
Volume/pages
|
|
|
|
112
:29
(2008)
, p. 10982-10987
| |
|
ISI
|
|
|
|
000257724100057
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|