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Enhancing total conductivity of epitaxial thin films by reducing thickness
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| Author |
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| Abstract |
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| High quality epitaxial c axis oriented La2NiO4+ä thin films have been prepared by the pulsed injection metal organic chemical vapor deposition technique on different substrates. High-resolution electron microscopy/transmission electron microscopy has been used to confirm the high crystalline quality of the deposited films. The c-parameter evolution has been studied by XRD as a function of time and gas atmosphere. The high temperature transport properties along the basal a−b plane of epitaxial La2NiO4+ä films have been measured, and the total conductivity of the layers has been found to increase as the thickness is reduced. Layers of 50 nm and thinner have shown a maximum conductivity larger than that measured for single-crystals, in particular, the 33 nm thick films with a conductivity of 475 S/cm in oxygen correspond to the highest value measured to date for this material. | | |
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English
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| Source (journal) |
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The journal of physical chemistry : C : nanomaterials and interfaces. - Washington, D.C., 2007, currens | |
| Publication |
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Washington, D.C. : 2008
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1932-7447 [print]
1932-7455 [online]
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| Volume/pages |
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112:29(2008), p. 10982-10987
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| ISI |
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000257724100057
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