Publication
Title
Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field
Author
Abstract
The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any AharonovBohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the AharonovBohm effect in semiconductor nanorings.
Language
English
Source (journal)
Nanotechnology. - Bristol
Publication
Bristol : 2008
ISSN
0957-4484
Volume/pages
19:45(2008), 6 p.
Article Reference
455401
ISI
000259922000016
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 09.06.2009
Last edited 18.06.2017
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