Title
Neutral shallow donors near a metallic interface Neutral shallow donors near a metallic interface
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Luton ,
Subject
Physics
Source (journal)
Microelectronics journal. - Luton
Volume/pages
40(2009) :4/5 , p. 753-755
ISSN
0026-2692
ISI
000265870200024
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
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