Publication
Title
Neutral shallow donors near a metallic interface
Author
Abstract
The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
Language
English
Source (journal)
Microelectronics journal. - Luton
Publication
Luton : 2009
ISSN
0026-2692
Volume/pages
40:4/5(2009), p. 753-755
ISI
000265870200024
Full text (Publishers DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 18.06.2009
Last edited 22.05.2017
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