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Title
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Neutral shallow donors near a metallic interface
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Author
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Abstract
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| The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity. |
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Language
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English
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Source (journal)
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Microelectronics journal. - Luton
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Publication
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Luton
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2009
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ISSN
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0026-2692
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DOI
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10.1016/J.MEJO.2008.11.010
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Volume/pages
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40
:4/5
(2009)
, p. 753-755
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ISI
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000265870200024
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Full text (Publisher's DOI)
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