Title Addition of yttrium into $HfO_{2}$ films: microstructure and electrical properties Author Dubourdieu, C. Rauwel, E. Roussel, H. Ducroquet, F. Hollaender, B. Rossell, M. Van Tendeloo, G. Lhostis, S. Rushworth, S. Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2009 New York, N.Y. , 2009 Subject Physics Source (journal) Journal of vacuum science and technology: A: vacuum surfaces and films. - New York, N.Y., 1983, currens Volume/pages 27(2009) :3 , p. 503-514 ISSN 0734-2101 ISI 000265739100016 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3. E-info http://dx.doi.org/10.1116/1.3106627 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265739100016&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265739100016&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265739100016&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle