Title
Revealing quantitative 3D chemical arrangement on Ge-Si nanostructuresRevealing quantitative 3D chemical arrangement on Ge-Si nanostructures
Author
Faculty/Department
Faculty of Sciences. Physics
Research group
Vision lab
Publication type
article
Publication
Washington, D.C.,
Subject
Physics
Chemistry
Source (journal)
The journal of physical chemistry : C : nanomaterials and interfaces. - Washington, D.C., 2007, currens
Volume/pages
113(2009):21, p. 9018-9022
ISSN
1932-7447
1932-7455
ISI
000266390100003
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The knowledge of composition and strain with atomic resolution is of utmost importance for the understanding of the chemical and electronic properties of alloyed nanostructures, and they can only be extracted in a self-consistent fashion. As an example, several works have addressed the issue of strain and chemical composition on self-assembled epitaxial islands using different techniques such as X-ray diffraction, scanning probe microscopy and transmission electron microscopy (TEM). However, limited information is available on the 3D chemical composition of such nanostructures. Here, we demonstrate the use of a quantitative high-resolution transmission electron microscopy (QHRTEM) technique to obtain two-dimensional (2D) projected chemical maps of epitaxially grown Ge−Si/Si(001) islands, with high spatial resolution, at different crystallographic orientations. Combining these data with iterative simulation, the reconstruction of the three-dimensional (3D) chemical arrangement on the strained Ge−Si/Si(001) islands was realized. This methodology can be applied for a large variety of strained crystalline systems, such as nanowires, epitaxial islands, quantum dots and wells, and partially relaxed heterostructures.
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