Title
Shallow donor states near a semiconductor-insulator-metal interface
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Lancaster, Pa ,
Subject
Physics
Source (journal)
Physical review : B : solid state. - Lancaster, Pa, 1970 - 1978
Volume/pages
80(2009) :3 , p. 035329,1-035329,10
ISSN
0556-2805
ISI
000268617800101
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/712a0c/fbec7bc2.pdf
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