Publication
Title
Shallow donor states near a semiconductor-insulator-metal interface
Author
Abstract
The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.
Language
English
Source (journal)
Physical review : B : solid state. - Lancaster, Pa, 1970 - 1978
Publication
Lancaster, Pa : 2009
ISSN
0556-2805
Volume/pages
80:3(2009), p. 035329,1-035329,10
ISI
000268617800101
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 09.09.2009
Last edited 10.10.2017
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