Publication
Title
Tunneling-lifetime model for metal-oxide-semiconductor structures
Author
Abstract
 In this paper we investigate the basic physics of charge carriers (electrons) leaking out of the inversion layer of a metal-oxide-semiconductor capacitor with a biased gate. In particular, we treat the gate leakage current as resulting from two combined processes: (1) the time-dependent decay of electron wave packets representing the inversion-layer charge and (2) the local generation of new electrons replacing those that have leaked away. As a result, the gate current simply emerges as the ratio of the total charge in the inversion layer to the tunneling lifetime. The latter is extracted from the quantum dynamics of the decaying wave packets, while the generation rate is incorporated as a phenomenological source term in the continuity equation. Not only do the gate currents calculated with this model agree very well with experiment, the model also provides an onset to solve the paradox of the current-free bound states representing the resonances of the Schrödinger equation that governs the fully coupled metal-oxide-semiconductor system.
Language
English
Source (journal)
Physical review : B : solid state. - Lancaster, Pa, 1970 - 1978
Publication
Lancaster, Pa : 2009
ISSN
0556-2805
Volume/pages
80:8(2009), p. 085315,1-085315,10
ISI
000269639300076
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address
External links
 Web of Science
Record
 Identification Creation 07.10.2009 Last edited 16.09.2017 To cite this reference