Publication
Title
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology
Author
Abstract
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2009
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
106:5(2009), p. 053702,1-053702,8
ISI
000269850300052
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 05.01.2010
Last edited 19.09.2018
To cite this reference