Publication
Title
Physical modeling of strain-dependent hole mobility in Ge **p**-channel inversion layers
Author
Abstract
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2009
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
106:8(2009), p. 083704,1-083704,9
ISI
000271358100050
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 26.01.2010
Last edited 05.02.2018
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