|
Title
|
|
|
|
Magnetoresistance in a hybrid ferromagnetic/semiconductor device
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip. |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
| |
|
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2010
| |
|
ISSN
|
|
|
|
0021-8979
[print]
1089-7550
[online]
| |
|
DOI
|
|
|
|
10.1063/1.3359652
| |
|
Volume/pages
|
|
|
|
107
:6
(2010)
, p. 063718,1-063718,4
| |
|
ISI
|
|
|
|
000276210800063
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|