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Title
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Zener tunneling in semiconductors under nonuniform electric fields
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Author
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Abstract
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| Recently, a renewed interest in Zener tunneling has arisen because of its increasing impact on semiconductor device performance at nanometer dimensions. In this paper we evaluate the tunnel probability under the action of a nonuniform electric field using a two-band model and arrive at significant deviations from the commonly used Kanes model, valid for weak uniform fields only. A threshold on the junction bias where Kanes model for Zener tunneling breaks down is determined. Comparison with Kanes model particularly shows that our calculation yields a higher tunnel probability for intermediate electric fields and a lower tunnel probability for high electric fields. When performing a current calculation comparing to the WKB approximation for the case of an abrupt p-n junction significant differences concerning the shape of the I-V curve are demonstrated. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
:
American Institute of Physics
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2010
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.3311550
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Volume/pages
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107
:5
(2010)
, p. 054520,1-054520,7
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ISI
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000275657500136
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Full text (Publisher's DOI)
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