Title
Photoinduced absorption study of carrier dynamics in Ru-doped <tex>$Bi_{12}SiO_{20}$</tex> crystals after nanosecond laser pulse excitation Photoinduced absorption study of carrier dynamics in Ru-doped <tex>$Bi_{12}SiO_{20}$</tex> crystals after nanosecond laser pulse excitation
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Volume/pages
107(2010) :11 , p. 7-
ISSN
0021-8979
1089-7550
ISI
000278907100007
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The charge carrier dynamics in the sillenite type crystal Bi12SiO20 (BSO) doped with ruthenium is studied by monitoring the optical density changes after nanosecond laser pulse excitation using a frequency-doubled Nd:yttrium aluminum garnet laser. Ruthenium doping leads to a relatively high density of trap levels that significantly increase the relaxation time of excited charge carriers in comparison with a nondoped BSO. Relaxation dynamics with two different decay time constants is observed in BSO:Ru in the studied submicron to 100 s time range and their dependences on pump intensity and on temperature are investigated. From the observed temperature dependence of the slower and faster of the two decay components, thermal activation energies of Ea,s = 0.80±0.03 eV and Ea,f = 0.68±0.03 eV were determined, respectively. The results indicate that in BSO:Ru at least two different traps centers are involved in the long-lived photoinduced carrier dynamics.
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