Publication
Title
Photoinduced absorption study of carrier dynamics in Ru-doped $Bi_{12}SiO_{20}$ crystals after nanosecond laser pulse excitation
Author
Abstract
 The charge carrier dynamics in the sillenite type crystal Bi12SiO20 (BSO) doped with ruthenium is studied by monitoring the optical density changes after nanosecond laser pulse excitation using a frequency-doubled Nd:yttrium aluminum garnet laser. Ruthenium doping leads to a relatively high density of trap levels that significantly increase the relaxation time of excited charge carriers in comparison with a nondoped BSO. Relaxation dynamics with two different decay time constants is observed in BSO:Ru in the studied submicron to 100 s time range and their dependences on pump intensity and on temperature are investigated. From the observed temperature dependence of the slower and faster of the two decay components, thermal activation energies of Ea,s = 0.80±0.03 eV and Ea,f = 0.68±0.03 eV were determined, respectively. The results indicate that in BSO:Ru at least two different traps centers are involved in the long-lived photoinduced carrier dynamics.
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2010
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
107:11(2010), p. 7
ISI
000278907100007
Full text (Publisher's DOI)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address