Publication
Title
Phonon band structures of Si nanowires
Author
Abstract
We present full ab initio calculations of the phonon band structure of thin Si nanowires oriented along the [110] direction. Using these phonon dispersion relations we investigate the structural stability of these wires. We found that all studied wires were stable also when doped with either B or P, if the unit cell was taken sufficiently large along the wire axis. The evolution of the phonon dispersion relations and of the sound velocities with respect to the wire diameters is discussed. Softening is observed for acoustic modes and hardening for optical phonon modes with increasing wire diameters.
Language
English
Source (journal)
AIP conference proceedings / American Institute of Physics. - New York
Publication
New York : 2009
ISSN
0094-243X
Volume/pages
1199(2009), p. 323-324
ISI
000281590800153
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
E-info
Web of Science
Record
Identification
Creation 02.12.2010
Last edited 07.11.2017
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