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Title
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Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition
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Author
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Abstract
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| In this paper, an O2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al2O3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O2, while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration. |
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Language
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English
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Source (journal)
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Plasma sources science and technology / Institute of Physics [Londen] - Bristol, 1992, currens
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Publication
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Bristol
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Institute of Physics
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2011
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ISSN
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0963-0252
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DOI
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10.1088/0963-0252/20/1/015008
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Volume/pages
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20
:1
(2011)
, p. 015008,1-015008,10
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Article Reference
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015008
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ISI
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000286592200009
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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