Publication
Title
Ab initio based atomic scattering amplitudes and {002} electron structure factors of $In_{x}Ga_{1-x}As/GaAs$ quantum wells
Author
Abstract
 The atomic scattering amplitudes of the various atoms of the systems Ga1−xInxAs, GaAs1−xNx and InAs1−xNx are calculated using the density functional theory (DFT) approach. The scattering amplitudes of N, Ga, As and In in the model systems are compared with the frequently used Doyle and Turner values. Deviation from the latter values is found for small scattering vectors (s<0.3Å−1) and for these scattering vectors dependence on the orientation of the scattering vector and the chemical environment is reported. We suggest a parametrization of these modified scattering amplitudes (MASAs) for small scattering vectors (s<1.0Å−1). The MASAs are exploited within zero pressure classical Metropolis Monte Carlo (MC), finite temperature calculations to investigate the effect of quantum well size on the electron {002} structure factor (SF) of Ga1−xInxAs quantum wells.
Language
English
Source (journal)
Journal of physics : conference series. - Bristol
Publication
Bristol : 2010
ISSN
1742-6588 [print]
1742-6596 [online]
Volume/pages
209:1(2010), p. 012040,1-012040,6
Article Reference
012040
ISI
000283739100040
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
 Faculty/Department Research group Project info Publication type Subject Affiliation Publications with a UAntwerp address