Publication
Title
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
Author
Abstract
Language
English
Source (journal)
Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. - Woodbury, N.Y.
Publication
Woodbury, N.Y. : 2004
ISSN
1071-1023
Volume/pages
22:3(2004), p. 1565-1569
ISI
000222481400141
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 28.03.2011
Last edited 01.07.2018