Title
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: a high-quality magnetic oxide-semiconductor heterostructure by reactive deposition
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Author
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Abstract
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We demonstrate the epitaxial growth of Fe3O4 films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2011
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3540653
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Volume/pages
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98
:1
(2011)
, p. 012512,1-012512,3
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ISI
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000286009800055
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Full text (Publisher's DOI)
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