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Title
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Impact of field-induced quantum confinement in tunneling field-effect devices
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Author
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Abstract
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| Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2011
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3573812
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Volume/pages
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98
:14
(2011)
, p. 143503,1-143503,3
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Article Reference
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143503
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ISI
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000289297800074
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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