Publication
Title
Temperature-dependent modeling and characterization of through-silicon via capacitance
Author
Abstract
A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.
Language
English
Source (journal)
IEEE electron device letters
Publication
2011
ISSN
0741-3106
Volume/pages
32:4(2011), p. 563-565
ISI
000288664800045
Full text (Publishers DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 31.05.2011
Last edited 26.05.2017
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