Publication
Title
Temperature-dependent modeling and characterization of through-silicon via capacitance
Author
Abstract
Language
English
Source (journal)
IEEE electron device letters
Publication
2011
ISSN
0741-3106
Volume/pages
32:4(2011), p. 563-565
ISI
000288664800045
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 31.05.2011
Last edited 17.01.2018
To cite this reference