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Title
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Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor
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Author
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Abstract
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| In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET. |
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Language
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English
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Source (journal)
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Journal of computational electronics. - Place of publication unknown
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Publication
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Place of publication unknown
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2011
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ISSN
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1569-8025
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DOI
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10.1007/S10825-011-0350-2
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Volume/pages
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10
:1
(2011)
, p. 216-221
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ISI
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000300735800021
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Full text (Publisher's DOI)
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