Title
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
,
Subject
Physics
Source (journal)
Journal of computational electronics. - Place of publication unknown
Volume/pages
10(2011) :1 , p. 216-221
ISSN
1569-8025
ISI
000300735800021
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.
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