Publication
Title
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor
Author
Abstract
In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.
Language
English
Source (journal)
Journal of computational electronics. - Place of publication unknown
Publication
Place of publication unknown : 2011
ISSN
1569-8025
Volume/pages
10:1(2011), p. 216-221
ISI
000300735800021
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 10.06.2011
Last edited 09.11.2017
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