Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
Faculty of Sciences. Physics
Journal of computational electronics. - Place of publication unknown
, p. 380-383
University of Antwerp
We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.