Title
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
,
Subject
Physics
Source (journal)
Journal of computational electronics. - Place of publication unknown
Volume/pages
7(2008) :3 , p. 380-383
ISSN
1569-8025
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.
Handle