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Title
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Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
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Author
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Abstract
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| We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure. |
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Language
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English
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Source (journal)
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Journal of computational electronics. - Place of publication unknown
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Publication
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Place of publication unknown
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2008
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ISSN
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1569-8025
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DOI
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10.1007/S10825-008-0217-3
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Volume/pages
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7
:3
(2008)
, p. 380-383
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ISI
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000208473800067
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Full text (Publisher's DOI)
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