Publication
Title
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
Author
Abstract
We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.
Language
English
Source (journal)
Journal of computational electronics. - Place of publication unknown
Publication
Place of publication unknown : 2008
ISSN
1569-8025
Volume/pages
7:3(2008), p. 380-383
ISI
000208473800067
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 10.06.2011
Last edited 24.06.2017
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