Publication
Title
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
Author
Abstract
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2010
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
107:2(2010), p. 024518,1-024518,8
ISI
000274180600122
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 10.06.2011
Last edited 01.07.2018