Title Tuning the Fermi level of $SiO_{2}$-supported single-layer graphene by thermal annealing Author Nourbakhsh, A. Cantoro, M. Klekachev, A. Clemente, F. Sorée, B. Veen, van der, M.H. Vosch, T. Stesmans, A. Sels, B. Gendt, de, S. Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2010 Washington, D.C. , 2010 Subject Physics Chemistry Source (journal) The journal of physical chemistry : C : nanomaterials and interfaces. - Washington, D.C., 2007, currens Volume/pages 114(2010) :5 , p. 6894-6900 ISSN 1932-7447 1932-7455 ISI 000276562500002 Carrier E Target language English (eng) Full text (Publishers DOI) Abstract The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level. E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000276562500002&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000276562500002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000276562500002&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848