Publication
Title
Modeling the capacitance-voltage response of $In_{0.53}Ga_{0.47}As$ metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections
Author
Abstract
 The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (Dit), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics , 2010
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
96 :21 (2010) , p. 213514,1-213514,3
ISI
000278183200090
Full text (Publisher's DOI)
UAntwerpen
 Faculty/Department Publication type Subject
External links
 Web of Science
Record
 Identifier Creation 10.06.2011 Last edited 25.05.2022