Title
Modeling the capacitance-voltage response of <tex>$In_{0.53}Ga_{0.47}As$</tex> metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections Modeling the capacitance-voltage response of <tex>$In_{0.53}Ga_{0.47}As$</tex> metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Volume/pages
96(2010) :21 , p. 213514,1-213514,3
ISSN
0003-6951
1077-3118
ISI
000278183200090
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
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