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Title
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Modeling the capacitance-voltage response of metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections
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Author
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Abstract
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| The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (Dit), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2010
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3436645
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Volume/pages
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96
:21
(2010)
, p. 213514,1-213514,3
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ISI
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000278183200090
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Full text (Publisher's DOI)
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