Publication
Title
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET
Author
Abstract
We explain the basic operation of a nanowire pinch-off FET and graphene nanoribbon tunnelFET. For the nanowire pinch-off FET we construct an analytical model to obtain the threshold voltage as a function of radius and doping density. We use the gradual channel approximation to calculate the current-voltage characteristics of this device and we show that the nanowire pinch-off FET has a subthreshold slope of 60 mV/dec and good ION and ION/IOFF ratios. For the graphene nanoribbon tunnelFET we show that an improved analytical model yields more realistic results for the transmission probability and hence the tunneling current. The first simulation results for the graphene nanoribbon tunnelFET show promising subthreshold slopes.
Language
English
Source (journal)
ECS transactions
Publication
2010
Volume/pages
28(2010), p. 15-26
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
E-info
Record
Identification
Creation 10.06.2011
Last edited 04.09.2013
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