Title
Numerical study of the plasma chemistry in inductively coupled <tex>$SF_{6}$</tex> and <tex>$SF_{6}/AR$</tex> plasmas used for deep silicon etching applications
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
London ,
Subject
Chemistry
Source (journal)
Journal of physics: D: applied physics. - London
Volume/pages
44(2011) :43 , p. 435202,1-435202,15
ISSN
0022-3727
ISI
000296591100004
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
A hybrid model, called the hybrid plasma equipment model, was used to study inductively coupled SF6 plasmas used for Si etching applications. The plasma properties such as number densities of electrons, positive and negative ions, and neutrals are calculated under typical etching conditions. The electron kinetics is analysed by means of the electron energy probability function. The plasma chemistry taking place in pure SF6 and in an Ar/SF6 mixture is also discussed, and finally the effect of the argon fraction on the plasma properties is investigated.
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