Publication
Title
Numerical study of the plasma chemistry in inductively coupled and plasmas used for deep silicon etching applications
Author
Abstract
A hybrid model, called the hybrid plasma equipment model, was used to study inductively coupled SF6 plasmas used for Si etching applications. The plasma properties such as number densities of electrons, positive and negative ions, and neutrals are calculated under typical etching conditions. The electron kinetics is analysed by means of the electron energy probability function. The plasma chemistry taking place in pure SF6 and in an Ar/SF6 mixture is also discussed, and finally the effect of the argon fraction on the plasma properties is investigated.
Language
English
Source (journal)
Journal of physics: D: applied physics. - London
Publication
London : 2011
ISSN
0022-3727
Volume/pages
44:43(2011), p. 435202,1-435202,15
Article Reference
435202
ISI
000296591100004
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 17.10.2011
Last edited 09.07.2017
To cite this reference