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Title
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Resistive switching at manganite/manganite interfaces
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Author
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Abstract
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| We report bipolar resistive switching between the interfaces of manganite nanocolumns. La0.7Sr0.3MnO3 films were prepared on Al2O3 substrates, where the films grow in nanocolumns from the substrate to the surface. Conductive atomic force microscopy directly detects that the resistive switching is located at the boundaries of the grains. Furthermore, mesoscopic transport measurements reveal a tunnel magnetoresistance. In combination with the resistive switching, this leads to a total of four different resistive states. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2011
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3643425
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Volume/pages
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99
:13
(2011)
, p. 132512,1-132512,3
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Article Reference
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132512
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ISI
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000295618000052
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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