Title
Low-field mobility in ultrathin silicon nanowire junctionless transistors Low-field mobility in ultrathin silicon nanowire junctionless transistors
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Volume/pages
99(2011) :23 , p. 233509,1-233509,3
ISSN
0003-6951
1077-3118
Article Reference
233509
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We theoretically investigate the phonon, surface roughness and ionized impurity limited low-field mobility of ultrathin silicon n-type nanowire junctionless transistors in the long channel approximation with wire radii ranging from 2 to 5 nm, as function of gate voltage. We show that surface roughness scattering is negligible as long as the wire radius is not too small and ionized impurity scattering is the dominant scattering mechanism. We also show that there exists an optimal radius where the ionized impurity limited mobility exhibits a maximum.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/a820a9/1328.pdf
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