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Title
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Low-field mobility in ultrathin silicon nanowire junctionless transistors
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Author
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Abstract
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| We theoretically investigate the phonon, surface roughness and ionized impurity limited low-field mobility of ultrathin silicon n-type nanowire junctionless transistors in the long channel approximation with wire radii ranging from 2 to 5 nm, as function of gate voltage. We show that surface roughness scattering is negligible as long as the wire radius is not too small and ionized impurity scattering is the dominant scattering mechanism. We also show that there exists an optimal radius where the ionized impurity limited mobility exhibits a maximum. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
:
American Institute of Physics
,
2011
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3669509
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Volume/pages
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99
:23
(2011)
, p. 1-3
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Article Reference
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233509
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ISI
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000298006100095
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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