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Title
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Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current
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Author
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Abstract
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| Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation. |
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Language
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English
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Source (journal)
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Solid state electronics. - Oxford
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Publication
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Oxford
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2011
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ISSN
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0038-1101
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DOI
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10.1016/J.SSE.2011.06.021
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Volume/pages
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65-66
(2011)
, p. 64-71
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ISI
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000297182700012
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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