Title Inelastic electron tunneling spectroscopy of $HfO_{2}$ gate stacks : a study based on first-principles modelingInelastic electron tunneling spectroscopy of $HfO_{2}$ gate stacks : a study based on first-principles modeling Author Scalise, E. Houssa, M. Pourtois, G. Afanas'ev, V.V. Stesmans, A. Faculty/Department Faculty of Sciences. Chemistry Research group Plasma, laser ablation and surface modeling - Antwerp (PLASMANT) Publication type article Publication 2011New York, N.Y. :American Institute of Physics, 2011 Subject Physics Chemistry Source (journal) Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens Volume/pages 99(2011):13, p. 132101,1-132101,3 ISSN 0003-6951 1077-3118 ISI 000295618000036 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract A first-principles modeling approach is used to investigate the vibrational properties of HfO2. The calculated phonon density of states is compared to experimental results obtained from inelastic electron tunneling spectroscopy (IETS) of various metal-oxide-semiconductor devices with HfO2 gate stacks. This comparison provides deep insights into the nature of the signatures of the complicated IETS spectra and provides valuable structural information about the gate stack, such as the possible presence of oxygen vacancies in jet-vapour deposited HfO2. Important structural differences between the interface of atomic-layer or molecular-beam deposited HfO2 and the Si substrate are also revealed. E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000295618000036&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000295618000036&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle