Publication
Title
Single crystalline GaN grown on porous Si(111) by MOVPE
Author
Abstract
In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta - omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Language
English
Source (journal)
Physica status solidi: C: conferences and critical reviews. - Berlin
Publication
Berlin : 2007
ISSN
1610-1634
Volume/pages
4:6(2007), p. 1908-1912
ISI
000247421800020
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 24.02.2012
Last edited 08.07.2017
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