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Title
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Single crystalline GaN grown on porous Si(111) by MOVPE
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Author
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Abstract
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| In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta - omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
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Language
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English
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Source (journal)
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Physica status solidi: C: conferences and critical reviews. - Berlin
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Publication
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Berlin
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2007
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ISSN
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1610-1634
[print]
1610-1642
[online]
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DOI
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10.1002/PSSC.200674316
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Volume/pages
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4
:6
(2007)
, p. 1908-1912
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ISI
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000247421800020
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Full text (Publisher's DOI)
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