Intersublevel absorption in stacked n-type doped self-assembled quantum dotsIntersublevel absorption in stacked n-type doped self-assembled quantum dots
Faculty of Sciences. Physics
Condensed Matter Theory
Department of Physics
Materials science forum. - Lausanne, 1984, currens
494(2005), p. 37-42
University of Antwerp
The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.