Publication
Title
Intersublevel absorption in stacked n-type doped self-assembled quantum dots
Author
Abstract
The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.
Language
English
Source (journal)
Materials science forum. - Lausanne, 1984, currens
Publication
Lausanne : 2005
ISSN
0255-5476 [print]
1662-9752 [online]
Volume/pages
494(2005), p. 37-42
ISI
000230985800007
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 24.02.2012
Last edited 08.06.2017
To cite this reference