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Title
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Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN
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Author
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Abstract
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| Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing. |
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Language
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English
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Source (journal)
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Springer proceedings in physics / Association for the Study of Internal Secretions. - Berlin
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Publication
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Berlin
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2005
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ISSN
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0930-8989
[print]
1867-4941
[online]
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Volume/pages
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107
(2005)
, p. 389-392
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ISI
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000237833300083
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