Title
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Berlin ,
Subject
Physics
Source (journal)
Springer proceedings in physics / Association for the Study of Internal Secretions. - Berlin
Volume/pages
107(2005) , p. 389-392
ISSN
0930-8989
ISI
000237833300083
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.
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