Publication
Title
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN
Author
Abstract
Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.
Language
English
Source (journal)
Springer proceedings in physics / Association for the Study of Internal Secretions. - Berlin
Publication
Berlin : 2005
ISSN
0930-8989
Volume/pages
107(2005), p. 389-392
ISI
000237833300083
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 24.02.2012
Last edited 25.03.2017
To cite this reference