Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopyChemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy
Faculty of Sciences. Physics
Electron microscopy for materials research (EMAT)
Engineering sciences. Technology
Materials science in semiconductor processing. - Oxford
4(2001):1/3, p. 109-111
University of Antwerp
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.