Title
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Oxford ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Materials science in semiconductor processing. - Oxford
Volume/pages
4(2001) :1/3 , p. 109-111
ISSN
1369-8001
ISI
000167727200026
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
E-info
https://repository.uantwerpen.be/docman/iruaauth/64b84e/ef12098.pdf
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