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Title
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First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts
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Author
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Abstract
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| The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization. |
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Language
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English
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Source (journal)
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Microelectronic engineering. - Amsterdam
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Publication
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Amsterdam
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2005
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ISSN
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0167-9317
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DOI
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10.1016/J.MEE.2005.04.080
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Volume/pages
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80
(2005)
, p. 272-279
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ISI
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000231517000062
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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