Title
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Microelectronic engineering. - Amsterdam
Volume/pages
80(2005) , p. 272-279
ISSN
0167-9317
ISI
000231517000062
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
E-info
https://repository.uantwerpen.be/docman/iruaauth/050a3b/8041330.pdf
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Handle