Publication
Title
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts
Author
Abstract
The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Language
English
Source (journal)
Microelectronic engineering. - Amsterdam
Publication
Amsterdam : 2005
ISSN
0167-9317
Volume/pages
80(2005), p. 272-279
ISI
000231517000062
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.02.2012
Last edited 24.05.2017
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