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Title
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Effect of high-frequency electromagnetic field on -implanted (001) Si
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Author
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Abstract
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| The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved. |
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Language
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English
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Source (journal)
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Vacuum: the international journal and abstracting service for vacuum science and technology. - Oxford
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Publication
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Oxford
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2004
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ISSN
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0042-207X
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DOI
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10.1016/J.VACUUM.2004.07.055
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Volume/pages
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76
:2-3
(2004)
, p. 325-328
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ISI
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000224890100048
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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