Publication
Title
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation
Author
Abstract
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Language
English
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Publication
2001
ISBN
0-7503-0818-4
Volume/pages
169(2001), p. 481-484
ISI
000176465200103
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.02.2012
Last edited 06.05.2017
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