Title
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Subject
Physics
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Volume/pages
(2001) :169 , p. 481-484
ISBN
0-7503-0818-4
ISI
000176465200103
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
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