Title
Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films
Author
Faculty/Department
Faculty of Applied Economics
Publication type
article
Publication
New York ,
Subject
Physics
Source (journal)
Semiconductors. - New York
Volume/pages
32(1998) :8 , p. 855-860
ISSN
1063-7826
ISI
000076068700011
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We describe the preparation of layers of amorphous Se, AsxS1-x, AsxSe1-x, GexS1-x, and GexSe1-x by plasma-enhanced chemical vapor deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy. (C) 1998 American Institute of Physics.
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