Publication
Title
Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films
Author
Abstract
We describe the preparation of layers of amorphous Se, AsxS1-x, AsxSe1-x, GexS1-x, and GexSe1-x by plasma-enhanced chemical vapor deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy. (C) 1998 American Institute of Physics.
Language
English
Source (journal)
Semiconductors. - New York
Publication
New York : 1998
ISSN
1063-7826
Volume/pages
32:8(1998), p. 855-860
ISI
000076068700011
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.02.2012
Last edited 12.11.2017
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